硫硒化钼晶体 MoSSe(Molybdenum Sulfide Diselenide)
晶体尺寸：~6毫米
电学性能：半导体
晶体结构：六边形
晶胞参数：取决于合金成分：a = b = 0.31 -0.33 nm and c = 1.21 -1.29 nm, α = β = 90°, γ = 120°
晶体类型：合成
晶体纯度：＞99.995%
X-ray diffraction on a MoSSe single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10
Powder X-ray diffraction (XRD) of a single crystal MoSSe. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal MoSSe by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal MoSSe. Measurement was performed with a 785 nm Raman system at room temperature.
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