日本Elionix 超高精密电子束光刻系统 ELS-F150

ELS-F150 Ultra High Precision Electron Beam Lithography System

World's highest acceleration voltage electron beam

lithography system

上加速电压 的电子束光刻系统

The ELS-F150 is the world's first 150 kV electron beam lithography system. Expanding upon the ELSF125 base system, the ELS-F150 enables single digit nanoscale device fabrication for advanced research.

ELS-F150是 上 个150千伏电子束光刻系统。在ELS-F125基础上展开系统，ELS-F150支持单位纳米级用于高级研究的设备制造。

Main Applications:

主要应用领域

- Quantum dots for quantum computing

-量子点用于量子计算

- Resolution and edge roughness testing for EUV resist

evaluation

EUV抗蚀剂的分辨率和边缘粗糙度测试评估

- < 10 nm master fabrication and material evaluation for

nanoimprint lithography

< 10nm母版制作和材料评估纳米压印光刻

- T-gate pattern on thick resist for HEMT devices

- HEMT器件厚抗蚀胶上的T-型栅极图案

- Nano gap patterning for bionano sensors

- 用于生物传感器的纳米间隙模式

- Fresnel Zone Plate (FZP) for X-ray gratings

- x射线光栅的菲涅耳带板(FZP)

Key Product Features

关键产品特性

- 4 nm linewidth guaranteed at 150 kV

- 4纳米线宽保证在150千伏

- 1.5 nm beam diameter and minimum proximity effect at 150 kV

- -1.5纳米束直径和 小接近效应在150千伏

- Wider process margin than 125 kV makes it easier to fabricate advanced nanodevices

- -比125千伏更宽的工艺裕度使制造*的纳米器件更容易

- Single cassette auto-loader as default, supports up to 6 slot multi-cassette auto-loader (option)

-默认单盒自动加载， 多支持6槽多盒自动加载(可选)

High Throughput and Uniformity

高通量和均匀性

- Superior fine line writing:

-的细线条书写:

3 nm line width at 50 nm pitch using commercially available resist

3nm线宽，50 nm间距，使用商用抗蚀剂

User-friendly Interface

友好的用户界面

[CAD and SEM interfaces on Windows]

CAD和SEM界面在Windows上

- Easy pattern design function

- -简单的图案设计功能

- Easy control of beam condition

- -易于控制电子束的条件

Specification规格