4英寸氮化镓复合衬底
GaN/ Al2O3 Substrates (4")
| 产品型号 Item | ST-ncY-Φ100 | ST-ncZ-Φ100 | ST-ncH-Φ100 | ||
| 尺寸 Size (mm) | Φ100.0±0.5 (4") | ||||
| 衬底结构 Substrate Structure | GaN on Sapphire(0001) (Standard: SSP Option: DSP) | ||||
| 厚度 Thickness (μm) | 4.5±0.5; 20±2; Customized | ||||
| 导电类型 Conduction Type | Un-doped | N-type | High-doped N-type | ||
| 电阻率 (300K) Resistivity (Ω·cm） | ≤0.5 | ≤0.05 | ≤0.01 | ||
| GaN厚度不均匀性 GaN Thickness Uniformity | ≤±10% (4") | ||||
| 位错密度 Dislocation Density (cm-2) | ≤5×108 | ||||
| 有效面积 Useable Surface Area | ＞90% | ||||
| 包装 Package | Packaged in a class 100 clean room environment. | ||||
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